View CZT268010_901223.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

CZT2680 SURFACE MOUNT HIGH VOLTAGE NPN SILICON SWITCHING POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2680 NPN High Voltage Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a SOT-223 Surface Mount Package. Typical applications include drivers and general high voltage switching applications. MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM PD TJ, Tstg JA 250 200 6.0 1.5 2.0 2.0 -65 to +150 62.5 UNITS V V V A A W C C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob ton toff VCB=200V IC=100A IC=20mA IE=100A IC=100mA, IB=10mA IC=500mA, IB=50mA IC=1.0A, IB=150mA IC=500mA, IB=50mA IC=1.0A, IB=150mA VCE=5.0V, IC=20mA VCE=5.0V, IC=500mA VCE=5.0V, IC=1.0A VCE=20V, IC=100mA, f=1.0MHz VCB=10V, IE=0, f=1.0MHz IC=500mA, VCC=20V, IC=500mA, VCC=20V, IB1= IB1= IB2=50mA IB2=50mA 40 40 15 50 250 200 6.0 435 275 9.0 45 95 135 0.83 0.95 105 90 47 80
MAX 100
UNITS nA V V V
150 200 500 1.10 1.20
mV mV mV V V
MHz 30 pF s s
0.3 1.0
R3 (1-March 2010)
CZT2680 SURFACE MOUNT HIGH VOLTAGE NPN SILICON SWITCHING POWER TRANSISTOR
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER
R3 (1-March 2010)
w w w. c e n t r a l s e m i . c o m

▲Up To Search▲

Price & Availability of CZT268010

	To Download CZT268010 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .